We demonstrate that under ambient and humidity-controlled conditions, operation of bimodal excitation single-scan electric force microscopy with no electrical feedback loop increases the spatial resolution of surface electrical property measurements down to the 5 nm limit. This technical improvement is featured on epitaxial graphene layers on SiC, which is used as a model sample. The experimental conditions developed to achieve such resolution are discussed and linked to the stable imaging achieved using the proposed method. The application of the herein reported method is achieved without the need to apply DC bias voltages, which benefits specimens that are highly sensitive to polarization. Besides, it allows the simultaneous parallel acquisition of surface electrical properties (such as contact potential difference) at the same scanning rate as in amplitude modulation atomic force microscopy (AFM) topography measurements. This makes it attractive for applications in high scanning speed AFM experiments in various fields for material screening and metrology of semiconductor systems.