Optoelectrical properties of the ternary chalcogenide SnSb 2 S 5 as a new absorber layer for photovoltaic application - Université de Picardie Jules Verne Accéder directement au contenu
Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2024

Optoelectrical properties of the ternary chalcogenide SnSb 2 S 5 as a new absorber layer for photovoltaic application

Résumé

A new material, tin antimony sulfide (SnSb 2 S 5 ) thin films, considering different thicknesses (200 nm, 312 nm and 431 nm), were obtained by thermal evaporation onto a glass substrate. The films were studied electrically ( I – V dependence) and optically to highlight their properties as photoanodes in thin film photovoltaic devices. The I – V characteristic curves showed n-type semiconductor samples with an electrical conductivity of 10 −3 (ohm cm) −1 under white light excitation. The values of the absorption coefficient ( α ) and extinction coefficient ( K ) were found to be enlarged by increasing the layer thickness. The SnSb 2 S 5 films displayed a high absorption coefficient of 10 5 cm −1 . The studied physical characterizations of tin antimony sulfide (SnSb 2 S 5 ) samples showed interesting optical and electrical properties for good absorber layers in thin film solar cell devices.
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Dates et versions

hal-04516687 , version 1 (22-03-2024)

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A Kraidy, I El Radaf, A Zeinert, A Lahmar, A Peláiz-Barranco, et al.. Optoelectrical properties of the ternary chalcogenide SnSb 2 S 5 as a new absorber layer for photovoltaic application. Journal of Physics D: Applied Physics, 2024, 57 (20), pp.205102. ⟨10.1088/1361-6463/ad2833⟩. ⟨hal-04516687⟩
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